indirect band gap meaning in Chinese

非竖直带隙

Bulk silicon , with indirect band gap of 1 . 12 ev , does n ' t emit visible light at room temperature
本体硅为间接禁带半导体，且禁带宽度比较窄( 1 . 12ev ) ，在室温下很难发可见光。
The mechanism of the luminescence has been discussed . bulk silicon , with indirect band gap of 1 . 12ev does n ' t emit light at room temperature
本体硅为间接禁带半导体，且禁带宽度较窄，室温下很难发光。
In particular , we analyze the temperature - dependent absorption associated with the 1 . 1 ev fundamental indirect band gap of single - crystal silicon . theoretically , a wide temperature range is possible
它具有测温范围广；单晶硅敏感材料制备、加工工艺成熟等优点，因此有较广泛的发展前景。
Silicon ( si ) is the leading material of microelectronic devices , but the nature of indirect band gap of si hinders its applications in integrated optoelectronics . to develop si - based optoelectronic integration by coupling the mature technology of si microelectronic integration with si - based light - emitting material will essentially meet the increasing demand of the great progress in the information technology
硅是微电子器件的主要材料，但硅的间接能隙特性严重制约了其在光电子领域的应用，如果能在硅基材料的基础上制备发光材料，就可利用已有成熟的硅集成技术发展硅光电子集成，从而有可能完全改变信息技术的面貌。